CPH6610 no.8167-1/7 features ? the CPH6610 incorporates a p-channel mosfet (mch3335) and an n-channel mosfet that feature low on-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. ? excellent on-resistance characteristic. specifications absolute maximum ratings at ta=25 c parameter symbol conditions n-channel p-channel unit drain-to-source voltage v dss 30 --30 v gate-to-source voltage (*1) v gss 20 --9 v drain current (dc) i d 1.4 --0.4 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 5.6 --1.6 a allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm) 1unit 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +150 c ( * 1) : when designing a circuit using this product, that this p-channel mosfet has a gate (oxide film) protection diode connecte d only between its gate and source. electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =700ma 0.66 1.1 s r ds (on)1 i d =700ma, v gs =10v 245 320 m w static drain-to-source on-state resistance r ds (on)2 i d =400ma, v gs =4v 415 580 m w input capacitance ciss v ds =10v, f=1mhz 65 pf output capacitance coss v ds =10v, f=1mhz 14 pf reverse transfer capacitance crss v ds =10v, f=1mhz 8 pf marking : fq continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn8167 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 12505pe ts im tb-00001115 CPH6610 n-channel and p-channel silicon mosfets load switching applications
CPH6610 no.8167-2/7 continued from preceding page. ratings parameter symbol conditions min typ max unit turn-on delay time t d (on) see specified test circuit. 5 ns rise time t r see specified test circuit. 4 ns turn-off delay time t d (off) see specified test circuit. 11 ns fall time t f see specified test circuit. 3 ns total gate charge qg v ds =10v, v gs =10v, i d =1.4a 2.5 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =1.4a 0.6 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =1.4a 0.3 nc diode forward voltage v sd i s =1.4a, v gs =0 0.9 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0 --1 m a gate-to-source leakage current i gss v gs = 8v, v ds =0 1 m a cutoff voltage v gs (off) v ds =--10v, i d =--100 m a --0.4 --1.4 v forward transfer admittance ? yfs ? v ds =--10v, i d =--200ma 0.2 0.42 s r ds (on)1 i d =--200ma, v gs =--4.5v 1.4 1.8 w static drain-to-source on-state resistance r ds (on)2 i d =--100ma, v gs =--2.5v 2.0 2.8 w input capacitance ciss v ds =--10v, f=1mhz 40 pf output capacitance coss v ds =--10v, f=1mhz 8 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 4.5 pf turn-on delay time t d (on) see specified test circuit. 10 ns rise time t r see specified test circuit. 5 ns turn-off delay time t d (off) see specified test circuit. 10 ns fall time t f see specified test circuit. 5 ns total gate charge qg v ds =--10v, v gs =--4.5v, i d =--400ma 0.83 nc gate-to-source charge qgs v ds =--10v, v gs =--4.5v, i d =--400ma 0.25 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--4.5v, i d =--400ma 0.17 nc diode forward voltage v sd i s =--400ma, v gs =0 --1.0 --1.5 v package dimensions electrical connection unit : mm 2202 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 sanyo : cph6 0.05 0.9 0.7 0.2 1.6 0.6 0.6 0.95 1 23 6 5 4 2.8 0.2 2.9 0.15 0.4 65 123 4 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 top view
CPH6610 no.8167-3/7 switching time test circuit [n-channel] [p-channel] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 --60 --40 --20 0 20 40 60 80 100 120 140 160 234 678 5910 it03296 0 0 0.5 1.0 2.0 0.2 1.5 0 100 200 300 400 500 600 700 800 0 0.4 0.6 0.8 1.0 4v 5v it03294 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 it03295 it03297 100 200 300 400 500 600 700 800 0 i d =0.7a, v gs =10v i d =0.4a, v gs =4v v gs =3v 6v 8v 10v v ds =10v i d =0.4a 0.7a ta=25 c [nch] [nch] [nch] [nch] r ds (on) -- v gs i d -- v ds i d -- v gs r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a ambient temperature, ta -- c --25 c ta=75 c ta= --25 c 25 c 75 c 25 c pw=10 m s d.c. 1% p. g 50 w g s d i d =700ma r l =21.4 w v dd =15v v out CPH6610 v in 10v 0v v in pw=10 m s d.c. 1% p. g 50 w g s d i d = --200ma r l =75 w v dd = --15v v out CPH6610 v in 0v --4.5v v in
CPH6610 no.8167-4/7 0 0.5 1.0 1.5 2.0 2.5 0 2 4 6 8 10 it03302 5 0.1 1.0 2 735723 3 2 5 10 7 5 3 2 1.0 v dd =15v v gs = 10 v t d (on) t d (off) t r t f it03300 it03298 0.01 0.1 23 57 2 2 357 1.0 3 3 1.0 2 0.1 7 5 3 2 v ds =10v it03299 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 5 1.0 7 5 3 2 7 5 3 2 3 2 v gs =0 --25? 25? ta=75? 0 5 10 15 20 25 30 3 10 100 2 7 5 3 7 5 it03301 ciss coss crss f=1mhz v ds =10v i d =1.4a --25? 25? ta=75? sw time -- i d ciss, coss, crss -- v ds ? y fs ? -- i d i f -- v sd drain current, i d -- a switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf v gs -- qg p d -- ta a s o total gate charge, qg -- nc gate-to-source voltage, v gs -- v ambient temperature, ta -- ? allowable power dissipation, p d -- w drain-to-source voltage, v ds -- v drain current, i d -- a [nch] [nch] [nch] [nch] [nch] [nch] [nch] it08686 2 3 5 7 2 3 5 7 2 3 5 7 10 1.0 0.1 0.01 23 57 23 57 23 5 5 7 0.01 0.1 1.0 10 23 i dp =5.6a i d =1.4a operation in this area is limited by r ds (on). 100ms 100 m s dc operation 1ms 10ms it08687 0.2 0.4 0.6 1.0 0.8 0 0 20 40 60 80 100 120 140 160 <10 m s ta=25 c single pulse mounted on a ceramic board (900mm 2 5 0.8mm) 1unit mounted on a ceramic board (900mm 2 5 0.8mm) 1unit
CPH6610 no.8167-5/7 [pch] [pch] [pch] [pch] [pch] [pch] [pch] [pch] it08162 it07656 it07653 it07654 --0.1 -- 1 0 1.0 0 --0.5 0 0 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.25 --0.20 --0.15 --0.10 --0.05 --0.30 --6.0v --4.5v --4.0v --3.5v --3.0v --2.5v --2.0v v gs = -- 1.5v --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05 --0.50 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 ta= --25 c --25 c 25 c 25 c ta=75 c 75 c v ds = --10v -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 -- 9 2.0 3.0 4.0 4.5 0.5 1.5 2.5 3.5 5.0 --10 ta=25 c --100ma i d = --200ma --40 --60 --20 0 20 40 60 80 100 120 140 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i d = --100ma, v gs = --2.5v i d = --200ma, v gs = --4.5v 0 --30 --10 --15 --20 --25 -- 5 it08163 --0.1 23 5 7 0 60 50 20 30 10 40 it08690 it07658 it07657 --0.001 0.1 0.01 --0.01 23 57 --0.1 22 357 357 --1.0 7 5 3 2 1.0 7 5 3 2 --0.8 --1.0 --0.6 --1.2 --1.4 --0.2 --0.4 0 --0.001 --0.1 --0.01 7 5 3 2 7 5 3 2 --1.0 7 5 3 2 t f t r coss ciss v ds = --10v ta= --25 c 75 c 25 c 10 7 5 3 2 3 2 v gs =0v 25 c --25 c ta= 75 c t d (off) t d (on) v ds = --15v v gs = --4.5v crss gate-to-source voltage, v gs -- v r ds (on) -- v gs ambient temperature, ta -- c r ds (on) -- ta drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w static drain-to-source on-state resistance, r ds (on) -- w drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf drain current, i d -- a sw time -- i d switching time, sw time -- ns diode forward voltage, v sd -- v i f -- v sd drain current, i d -- a forward transfer admittance, ? y fs ? -- s ? y fs ? -- i d forward current, i f -- a
CPH6610 no.8167-6/7 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v r ds (on) -- i d drain current, i d -- a r ds (on) -- i d drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w static drain-to-source on-state resistance, r ds (on) -- w ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 23 57 23 57 --0.01 --0.1 --1.0 it08692 v gs = --4.5v ta= 75 c 25 c -- 25 c 5 7 1.0 2 3 5 5 7 1.0 2 3 23 57 23 57 --0.01 --0.1 --1.0 it08165 v gs = --2.5v ta= 75 c -- 25 c 25 c [pch] [pch] [pch] [pch] it08689 0.2 0.4 0.6 1.0 0.8 0 0 20 40 60 80 100 120 140 160 [pch] it08688 2 3 5 7 2 3 5 7 2 3 --1.0 --0.1 --0.01 23 57 23 57 23 5 --0.1 --1.0 --10 i dp = --1.6a i d = --0.4a operation in this area is limited by r ds (on). 100ms 100 m s dc operation 1ms 10ms a s o drain-to-source voltage, v ds -- v drain current, i d -- a <10 m s ta=25 c single pulse mounted on a ceramic board (900mm 2 5 0.8mm) 1unit mounted on a ceramic board (900mm 2 5 0.8mm) 1unit 0 0 0.9 0.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 --4.5 --4.0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 it08944 v ds = --10v i d = --400ma
CPH6610 no.8167-7/7 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of january, 2005. specifications and information herein are subject to change without notice. note on usage : since the CPH6610 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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